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MCC
Features
* *
omponents 21201 Itasca Street Chatsworth !"# $
% !"#
MMBT4401
Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation
C Pin Configuration Top View
NPN General Purpose Amplifier
SOT-23
A D
2X
B E
Electrical Characteristics @ 25C Unless Otherwise Specified
Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10mAdc, IE=0) Emitter-Base Breakdown Voltage (I E=0.1mAdc, IC=0) Base Cutoff Current (VCE=35Vdc, VBE=0.4Vdc) Collector Cutoff Current (VCE=35Vdc, VBE=0.4Vdc) DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=150mAdc, VCE=1.0Vdc) (I C=500mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Current Gain-Bandwidth Product (I C=20mAdc, VCE=10Vdc, f=100MHz) Collector-Base Capacitance (VCB=5.0Vdc, IE=0, f=1.0MHz) Emitter-Base Capacitance (VBE=0.5Vdc, IC=0, f=1.0MHz) Delay Time (VCC=30Vdc, VBE=0.2Vdc Rise Time IC=150mAdc, IB1=15mAdc) Storage Time (VCC=30Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) 300s, Duty Cycle 2.0% Min 40 60 6.0 0.1 0.1 Max Units Vdc Vdc Vdc Adc
G F
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX
C
B
E
H
J
Adc
K DIMENSIONS
ON CHARACTERISTICS
hFE 20 40 80 100 40
DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015
300
VCE(sat)
0.4 0.75 0.75 0.95 1.2
Vdc
VBE(sat)
MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020
MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37
MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51
NOTE
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Ccb Ceb 250 6.5 30.0 15 20 225 30 MHz pF pF ns ns ns ns
.035 .900
Suggested Solder Pad Layout
.031 .800
SWITCHING CHARACTERISTICS
td tr ts tf *Pulse Width
.037 .950 .037 .950
.079 2.000
inches mm
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MMBT4401
DC Current Gain vs Collector Current 360 VCE = 10V 300 240 hFE 180 120 60 VBE(ON) - (V) 0.6 0.4 TA = 125C 0.2 0 1.2 1.0 0.8 TA = 25C
MCC
Base-Emitter ON Voltage vs Collector Current VCE = 10V
1
10 IC (mA)
100
1000
1
10
100 IC - (mA)
1000
Collector-Emitter Saturation Volatge vs Collector Current .24 .20 .16 VCE(SAT) - (V) .12 .08 .04 0 1.0 VBE(SAT) - (V) 1.1 IC/IB = 10 TA = 25C 1.0 0.9 0.8 0.7 0.6
Base-Emitter Saturation Voltage vs Collector Current IC/IB = 10 TA = 25C
10 IC - (mA)
100
1000
0.5 1.0
10 IC - (mA)
100
1000
Collector-Base Diode Reverse Current vs Temperature 100 40 32 VCB = 20V 10 ICBO - (mA) 1.0 8 0.1 0 25 50 75 TJ - (C) 100 125 150 pF 24
Input Capacitance vs Reverse Bias Voltage f = 1MHz
16
Ceb
0 0.1
1.0 Volts - (V)
10
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MMBT4401
Maximum Power Dissipation vs Ambient Temperature 800 10 8 TO-92 PD(MAX) - (mW) 400 pF 6
MCC
Output Capacitance vs Reverse Bias Voltage f = 1MHz
600
4 200 SOT-23 0 0 50 100 TA - (C) 150 200 2 0 0.1
Ccb
1.0 Volts - (V)
10
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